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Amplifier, Power, 8W 2.0-8.0 GHz
Features
8 Watt Saturated Output Power Level Eutectically mounted to Heat Spreader Next level integration is a Silver Epoxy-Based Process Variable Drain Voltage (6-10V) Operation MSAGTM Process
MAAP-000074-PED000
Rev -- Preliminary Datasheet
Description
The MAAP-000074-PED000 is a 2-stage 8W power amplifier with on-chip bias networks, eutettically mounted on a 10-mil thick Copper Molybdenum (CuMo) pedestal. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM's repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAGTM)Process, each device is 100% RF tested at the die-on-pedestal assembly level to ensure performance compliance. M/A-COM's MSAGTM process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging.
Primary Applications

SatCom Radio Communications Radar Electronic Warfare
Also Available in:
Description Part Number Die MAAPGM0074-DIE Ceramic Package Sample Board (Die) Sample Board (Pkg) Mechanical Sample (Die) MAAP-000074-MCH000 MAAP-000074-PKG001 MAAP-000074-SMB004 MAAP-000074-SMB001
Electrical Characteristics: T B = 30C1, Z0 = 50 , VDD = 10V, IDQ = 2.1A2, Pin = 28 dBm, RG=40
Parameter Bandwidth Output Power 1-dB Compression Point Small Signal Gain Input VSWR Output VSWR Gate Current Drain Current 2nd Harmonic, 2-4 GHz 2nd Harmonic, 6-8 GHz 1. 2. 1
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
Symbol f POUT P1dB G VSWR VSWR IGG IDD 2f 2f
Typical 2.0-8.0 39 38 14 1.7:1 2.2:1 3.5 3.5 16.5 72
Units GHz dBm dBm dB
mA A dBc dBc
TB = MMIC Base Temperature Adjust VGG between -2.6 and -1.5V to achieve specified IDQ .
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 8W 2.0-8.0 GHz
Maximum Ratings3
Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF) Quiescent DC Power Dissipated (No RF) Junction Temperature Storage Temperature Symbol PIN VDD VGG IDQ PDISS TJ TSTG Absolute Maximum 33 +12.0 -3.0 3.0 33 170 -55 to +150
MAAP-000074-PED000
Rev -- Preliminary Datasheet
Units dBm V V A W C C
3. Operation beyond these limits may result in permanent damage to the part.
Recommended Operating Conditions4
Characteristic Drain Voltage Gate Voltage Input Power Thermal Resistance MMIC Base Temperature Symbol VDD VGG PIN JC TB Min 4.0 -2.6 Typ 10 -2.2 28 4.3 Note 5 Max 10 -1.5 30 Unit V V dBm C/W C
4. Operation outside of these ranges may reduce product reliability. 5. MMIC Base Temperature = 170C -- JC* VDD * I DQ
Power Derating Curve, Quiescent (No RF)
40
Operating Instructions
Peak Power Dissipation [Watts]
35 30 25 20 15 10 5 0 -40 -20 0 20 40 60 80 100 120 140 160 180 Maximum Allowable Base Temperature [C]
This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2.7 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 10.0 V. 3. Adjust VGG to set IDQ, (approximately @ -2.2 V). 4. Set RF input.
5. Power down sequence in reverse. Turn VGG off
last.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 8W 2.0-8.0 GHz
45 43 41 39 50 45 40 35 45 43 41 39
MAAP-000074-PED000
Rev -- Preliminary Datasheet
All Data is at 30C MMIC base temperature, CW stimulus, unless otherwise noted.
35 33 31 29 27 25 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 Pout PAE
25 20 15 10 5 0
P 1dB (dBm)
P out (dBm)
PAE (%)
37
30
37 35 33 31 29 27 25 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 6V 8V 10V
Frequency (GHz) Figure 1. Output Power and Power Added Efficiency vs. Frequency at VD=10V, P in=28dBm, and 25% IDSS
45 43 41 39 45 43 41 39
Frequency (GHz) Figure 2. 1dB Compression Point vs. Frequency by Drain Voltage at 25% IDSS
Psat (dBm)
Psat (dBm)
37 35 33 31 29 27 25 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 6V 8V 10V
37 35 33 31 29 27 25 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 -20C 33C 93C
Frequency (GHz) Figure 3. Saturated Output Power vs. Frequency by Drain Voltage at 25% IDSS
Frequency (GHz) Figure 4. Saturated Output Power vs. Frequency by Temperature at 10V and 25% IDSS
20 18
6
42.00 40.00
22.00 20.00 18.00 16.00 14.00 Pout PAE SSG IDS 12.00 10.00 8.00 6.00 4.00 2.00 150
Output Power (dBm), PAE (%)
14
36.00 34.00 32.00 30.00 28.00 26.00 24.00
Gain (dB)
12 10 8 6 4 2 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 10V Input VSW R OutputVSWR
4
3
2
1
22.00 30 40 50 60 70 80 90 100 110 120 130 140
Frequency (GHz) Figure 5. Small Signal Gain and Input and Output VSWR vs. Frequency by Drain Voltage at 25% IDSS
Junction Temperature (C) Figure 6. Output Power, Small Signal Gain, Power Added Efficiency, and Drain Current vs. Junction Temperature at 10 V, 5.5 GHz, and 25% IDSS
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.
SSG (dB), Drain Current (A)
16
5
38.00
VSWR
Amplifier, Power, 8W 2.0-8.0 GHz
45 43 41 39 37 18.0 16.0 14.0 35 20.0
MAAP-000074-PED000
Rev -- Preliminary Datasheet
All Data is at 30C MMIC base temperature, CW stimulus, unless otherwise noted.
Output Power (dBm)
31 29 27 25 23 21 19 17 15 6 8 10 12 14 16 18 20 22 24 26 28 30 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 7 GHz 8 GHz
Gain (dB)
33
12.0 10.0 8.0 6.0 4.0 2.0 0.0 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 3 GHz 5.5 GHz 8 GHz
Input Power (dBm) Figure 7. Output Power vs. Input Power by Frequency at 10V and 25% IDSS
Output Power (dBm) Figure 8. Gain vs. Output Power by Frequency at 10V and 25% IDSS
30 28 26 24 22 20 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 7 GHz 8 GHz
5.0 4.5 4.0 3.5
Drain Current (A)
PAE (%)
18 16 14 12 10 8 6 4 2 0 6 8
3.0 2.5 2.0 1.5 1.0 0.5 0.0 6 8 10 12 14 16 18 20 22 24 26 28 30 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 7 GHz 8 GHz
10
12
14
16
18
20
22
24
26
28
30
Input Power (dBm) Figure 9. Power Added Efficiency vs. Input Power by Frequency at 10V and 25% IDSS
Input Power (dBm) Figure 10. Drain Current vs. Input Power by Frequency at 10V and 25% IDSS
45 43 41 39 37
20.0 18.0 16.0 14.0
Output Power (dBm)
35
31 29 27 25 23 21 19 17 15 6 8 10 12 14 16 18 20 22 24 26 28 30 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 7 GHz 8 GHz
Gain (dB)
33
12.0 10.0 8.0 6.0 4.0 2.0 0.0 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 3 GHz 5.5 GHz 8 GHz
Input Power (dBm) Figure 11. Output Power vs. Input Power by Frequency at 8V and 25% IDSS
Output Power (dBm) Figure 12. Gain vs. Output Power by Frequency at 8V and 25% IDSS
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 8W 2.0-8.0 GHz
30 28 26 24 22 20 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 7 GHz 8 GHz 5.0 4.5 4.0 3.5
MAAP-000074-PED000
Rev -- Preliminary Datasheet
All Data is at 30C MMIC base temperature, CW stimulus, unless otherwise noted.
PAE (%)
18 16 14 12 10 8 6 4 2 0 6 8
Drain Current (A)
3.0 2.5 2.0 1.5 1.0 0.5 2 GHz 3 GHz 4 GHz 5 GHz 6 GHz 7 GHz 8 GHz
10
12
14
16
18
20
22
24
26
28
30
0.0 6 8 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm) Figure 13. Power Added Efficiency vs. Input Power by Frequency at 8V and 25% IDSS
Input Power (dBm) Figure 14. Drain Current vs. Input Power by Frequency at 8V and 25% IDSS
100 90 80
Harmonic (dBc)
70 60 50 40 30 20 10 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 6 dBm 10 dBm 14 dBm 18 dBm 22 dBm 26 dBm 30 dBm
2
nd
Frequency (GHz) Figure 15. Second Harmonic vs. Frequency by Input Power at 10V and 25% IDSS
Figure 16. Fixture used to characterize MAAPGM0074-DIE under CW stimulus.
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 8W 2.0-8.0 GHz Mechanical Information
Chip Size: 5.204 x 6.550 x 0.356 mm
(204
MAAP-000074-PED000
Rev -- Preliminary Datasheet
x 258 x 14 mils)
Chip edge to bond pad dimensions are shown to the center of the bond pad.
Figure 17. Die Layout
Bond Pad Dimensions
Pad RF In and Out DC Drain Supply Voltage VD1 DC Drain Supply Voltage VD2 DC Gate Supply Voltage VG1 DC Gate Supply Voltage VG2 6
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
Pad No. 1 2 3 4 5
Size (m) 100 x 200 200 x 150 500 x 200 150 x 150 150 x 125
Size (mils) 4x8 8x6 20 x 8 6x6 6x5
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 8W 2.0-8.0 GHz
Recommended Layout and Wire Bonding Configuration
MAAP-000074-PED000
Rev -- Preliminary Datasheet
GND
In implementing the DC/ RF crossover shown, the following rules must applied. 1. 2. 3. 4. the DC crossovers should approach and cross the RF trace at a 90 degree angle; the printed DC traces that approach the RF line should be stopped 2 substrate heights from the RF line edge; the rated current capability of the DC crossovers should be greater than the maximum current of the device; and the wires or ribbons used to make the DC crossovers should clear the RF trace by ~ 1 substrate height.
Power Supply Sequencing:
Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier.
Die Handling:
Refer to Application Note AN3016. All Application Notes may be accessed by going to http://www.macom.com/
Application%20Notes/index.htm.
7
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.
Amplifier, Power, 8W 2.0-8.0 GHz
Next Level Assembly Instructions:
MAAP-000074-PED000
Rev -- Preliminary Datasheet
Pedestal Die Attach: The following paragraphs detail recommendations and instructions for the integration of the die on pedestal (IC assembly) and mating substrates to the next level assembly. These recommendations are summarized pictorially in Figure 18.
To attach the die/pedestal assembly to the next level assembly, use a high thermal conductivity silver loaded epoxy. Two epoxies are recommended for this purpose, Diemat (www.diemat.com) PNs DM6030HK and DM4030LD with bulk thermal conductivities of 60 and 15 W/m-C, respectively. Silver-filled epoxies with conductivities < 10 W/m-C are not recommended for use in attaching these IC assemblies. DM6030HK is recommended for use when the coefficient of thermal expansion (CTE) of the material to which the IC assembly is to be attached is similar to that of CuMo (CTE ~ 7ppm). A next level assembly attach material with a CTE range of 4-10ppm would be acceptable. DM4030LD is recommended when the CTE of the next level assembly material is significantly greater than CuMo, e.g, Copper and Aluminum with CTEs of 14 and 23 ppm, respectively. Bondline thickness, the as-cured thickness of the silver epoxy layer between the IC assembly and next level assembly attach surface, is a critical parameter in terms of device performance and reliability. Bondline thickness should be maintained between 1 and 1.5 mils. A bondline thickness of < 1 mil reduces the sheer strength of the mechanical attach. Bondline thicknesses > 1.5 mils impacts in an incremental fashion the junction temperature of the IC and thereby the MTTF. The pedestal thickness used in the IC assembly is set at 10 mils such that the final IC assembly thickness is ~ 14 mils making it approximately planar with a mating substrate of 15 mil alumina, a thickness commonly used through X-band. This surface planarity was an objective because it results in shorter RF bond wire lengths between the IC assembly RF I/O and the mating substrate transmission line. Long bond wires can shift the load impedance required for ideal power transfer. Shorter RF bond wires result in improved RF performance. In any nominal microelectronic manufacturing environment, the process of silver epoxy attach of substrates and IC assemblies to the next level assembly can result in variable epoxy squeeze-out or run-out at the substrate or IC assembly peripheries. This variability, if not compensated for in the design of the overall assembly, can result in a high number of assembly failures due to epoxy wicking. This wicking process can occur when a mating substrate and IC assembly are placed too close to each other. To avoid this occurrence, a designed-in 5-10 mil spacing between the IC assembly and mating substrates is recommended. Wirebonding: Bond @ 160C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
8
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.

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